器件名称: HUFA75332P3
功能描述: 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
文件大小: 271.19KB 共10页
简 介:HUFA75332G3, HUFA75332P3, HUFA75332S3S
Data Sheet June 2002
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.
Features
60A, 55V Simulation Models - Temperature Compensated PSPICE and SABER Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER HUFA75332G3 HUFA75332P3 HUFA75332S3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75332G 75332P 75332S
S G
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75332S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (TAB)
JEDEC TO-263AB
G……