器件名称: HML1225
功能描述: 0.8A 300.380 VOLTAGE SCRS IGT<200uA
文件大小: 28.37KB 共2页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data Issued Date : 1992.11.25 Revised Date : 2001.06.29 Page No. : 1/2
HML1225/HXL1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HML1225/HXL1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.
Absolute Maximum Ratings (Ta=25°C)
Parameter Repetitive Peak Off State Voltage On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature Part No. HXL1225 HML1225 Symbol VDRM VDRM IT(rms) IT(AV) VGRM IGM PG(AV) Tj Tstg Tsld Min 380 300 0.8 0.5 8 1 0.1 -40 -40 Max 125 125 250 Unit Test Conditions V Tj=40°C to 125°C (RGK=1K) V A TC=40°C A Half Cycle=180°,TC=40°C V A W °C °C °C IGR=10uA 10us max 20ms max
1.6mm from case 10s max
Classification Of IGT
Rank HML1225 HXL1225 AA 10-18 uA 10-18 uA AB 12-23 uA 12-23 uA AC 17-28 uA 17-28 uA AD 22-55 uA 22-55 uA B 45-105 uA 45-105 uA C 95-155 uA
Electrical Characteristics (Ta=25°C)
Parameter Off-State Leakage Current Off-State Leakage Current On-State Voltage On-State Threshold Voltage On-State Slops Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Crtical Rate of Current Rise Gate Controlled Delay Time Commutated Turn-off Time Thermal Resistance junc.to case Thermal Resistance junc. to amb
HML1225,……
