器件名称: 1N5251B
功能描述: 500mW 5% DO-35 ZENER DIODE
文件大小: 21.78KB 共2页
简 介:RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5223B THRU 1N5261B
500mW 5% DO-35 ZENER DIODE
Absolute Maximun Ratings (Ta=25oC)
Items Power Dissipation Power Derating (above 75 oC) Forward Voltage @If = 10 mA Vz Tolerence Junction Temp. Storage Temp. Symbol PTOT Ratings 500 4.0 Vf 1.2 5 -65 to 175 -65 to 175 Unit mW mW/oC V % C o C
o
Dimensions
DO-35
2 6 M IN
0 .4 5 7 D IA . 0 .5 5 9
TJ TSTG
4 .2 m ax. 2 .0 D IA . m ax. 2 6 M IN
Dimensions in millimeters
Mechanical Data
Items
P a cka g e C a se Lead/Fi ni sh C hi p
Materi als
D O-35 Hermeti cally sealed glass D ouble Stud/Solder Plati ng Glass Passi vated
Electrical Characteristics (Ta=25oC)
ZENER VOLTAGE TYPE Vz(V) 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 Izt(mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 Rz (ohms) 30 30 29 28 24 23 22 19 17 11 7 7 5 Izt(mA0 20 20 20 20 20 20 20 20 20 20 20 20 20 MAX ZENER IMPEDANCE MAX ZENER IMPEDANCE Izt = 0.25mA MAXIMUM REVERSE CURRENT TEMP. COEFF.
dvz
Rz (ohms) 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.6 IR (uA) 75 75 50 25 15 10 5 5 5 5 5 5 3 (%/ oC) -0.080 -0.080 -0.075 -0.070 -0.065 -0.060 +/-0.055 +/-0.030 +/-0.030 +/-0.038 +/-0.038 +0.045 +0.050
Electrical Characteristics (Ta=25oC)
ZENER VOLTAGE TYPE Vz(V) 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N524……
