器件名称: 1N5250B
功能描述: Silicon Z-Diodes
文件大小: 47.53KB 共4页
简 介:1N5221B...1N5267B
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Silicon Z–Diodes
Features
D D D D
Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions TL 75°C
x
Type
Symbol PV IZ Tj Tstg
Value 500 PV/VZ 200 –65...+200
Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8”), TL=constant Symbol RthJA Value 300 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.1 Unit V
Document Number 85588 Rev. 2, 06-Aug-99
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1N5221B...1N5267B
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Type 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B VZnom 1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.……
