器件名称: FM160-N
功能描述: Chip Schottky Barrier Diodes - Silicon epitaxial planer type
文件大小: 37.97KB 共2页
简 介:Chip Schottky Barrier Diodes
FM120-N THRU FM1100-N
Silicon epitaxial planer type
Formosa MS
SMA-N
0.185(4.8) 0.173(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.040(1.0) Typ.
0.110(2.8) 0.094(2.4)
0.165(4.2) 0.150(3.8)
0.067(1.7) 0.060(1.5)
0.040 (1.0) Typ.
0.067(1.7) 0.053(1.3)
Mechanical data
Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 88 120 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE SS12 SS13 SS14 SS15 SS16 SS18 S110
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM120-N FM130-N FM140-N FM150-N FM160-N FM180-N FM1100-N 20 30 40 50 60 80 100
(V) 14 21 28 35 42 56 7……
