器件名称: FM160-M-R
功能描述: Chip Schottky Barrier Diodes - Silicon epitaxial planer type
文件大小: 72KB 共2页
简 介:Formosa MS FM120-M-R THRU FM1100-M-R
Chip Schottky Barrier Diodes Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.063(1.6) 0.055(1.4)
SOD-123
0.161(4.1) 0.146(3.7) 0.012(0.3) Typ.
0.071(1.8) 0.055(1.4)
0.126(3.2) 0.110(2.8)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, JEDE C SOD-123 / MI NI SMA Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.04 gram
o MAXIMUM RATINGS (AT T A=25 C unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C IR Rq JA CJ TSTG -55 98 120 +150 CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.1 2.0
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
C
SYMBOLS
MARKING CODE 12 13 14 15 16 18 10
V RRM
20 30 40 50 60 80
*1
V RMS
14 21 28 35 42 56 70
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM120-M-R FM130-M-R FM140-M-R FM150-M-R FM160-M-R FM180-M-R FM1100-M-R
(V)
(V) 20 30 40 50 60 ……
