器件名称: FM140-N
功能描述: Chip Schottky Barrier Diodes - Silicon epitaxial planer type
文件大小: 71.17KB 共2页
简 介:Chip Schottky Barrier Diodes
FM120-N THRU FM160-N
Silicon epitaxial planer type
Formosa MS
SOD-323
0.106 (2.7) 0.090 (2.3) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.044 (1.1) 0.035 (0.9)
0.053 (1.35) 0.045 (1.15)
0.035(0.9) Typ.
0.035(0.9) Typ.
Mechanical data
Case : Molded plastic, JEDEC SOD-323 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.04 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T A =25 o C unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 o C CONDITIONS Symbol IO I FSM MIN. TYP. MAX. 1.0 30 0.5 10 R q JC CJ T STG -55 90 120 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
V R = V RRM T A = 125 o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE 12 13 14 15 16
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM120-N FM130-N FM140-N FM150-N FM160-N 20 30 40 50 60
(V) 14 21 28 35 42
(V) 20 30 40 50 60
(V)
0.55
-55 to +125
*1 Repetitive peak reverse voltage *2 RM……
