器件名称: FJV3115R
功能描述: NPN Epitaxial Silicon Transistor
文件大小: 55.85KB 共4页
简 介:FJV3115R
FJV3115R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=10K)
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R35
R1 B R2
NPN Epitaxial Silicon Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10A, IE=0 IC=100A, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100Α VCE=0.3V, IC=20mA 1.5 0.20 2.2 0.22 0.3 3 2.9 0.25 250 3.7 33 0.3 V MHz pF V V K Min. 50 50 0.1 Typ. Max. Units V V A
2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJV3115R
Typical Characteristics
10
1000
VCE = 5V R1 = 2.2K R2 = 10K
VCE = 5V R1 = 2.2K R2 = 10K
100
VI(on)[V], INPUT VOLTAGE
1 10 100 1000
hFE, ……
