器件名称: FJV3111R
功能描述: NPN Epitaxial Silicon Transistor
文件大小: 45.71KB 共3页
简 介:FJV3111R
FJV3111R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJV4111R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R31
B
R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 40 5 100 200 150 -55 ~ 150
E
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC=100A, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA 15 3.7 250 22 29 100 Min. 40 40 0.1 600 0.3 V pF MHz K Typ. Max. Units V V A
2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJV3111R
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12 –0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millimeters
2002 Fairchild Semiconductor C……
