器件名称: FJV3110RMTF
功能描述: NPN Epitaxial Silicon Transistor
文件大小: 52.01KB 共4页
简 介:FJV3110R
FJV3110R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJV4110R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R30
B
R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 40 5 100 200 150 -55 ~ 150
E
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC=100A, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA 7 3.7 250 10 13 100 Min. 40 40 0.1 600 0.3 V pF MHz K Typ. Max. Units V V A
2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJV3110R
Typical Characteristics
10000
1000
VCE(sat)[mV], SATURATION VOLTAGE
VCE = 5V R = 10K
IC = 10IB R = 10K
hFE, DC CURRENT GAIN
1000
100
100
10
10 0.1
1
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
……
