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FJV3108R

器件名称: FJV3108R
功能描述: NPN Epitaxial Silicon Transistor
文件大小: 55.75KB    共4页
生产厂商: FAIRCHILD
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简  介:FJV3108R FJV3108R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJV4108R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R28 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10A, IE=0 IC=100Α, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100A VCE=0.3V, IC=2mA 32 1.9 47 2.1 0.8 4 62 2.4 250 3.7 56 0.3 V MHz pF V V K Min. 50 50 0.1 Typ. Max. Units V V A 2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV3108R Typical Characteristics 1000 100 VCE = 5V R1 = 47K R2 = 22K VCE = 0.3V R1 = 47K R2 = 22K VI(on)[V], INPUT VOLTAGE hFE, ……
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FJV3108R NPN Epitaxial Silicon Transistor FAIRCHILD
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