器件名称: FJV3105R
功能描述: NPN Epitaxial Silicon Transistor
文件大小: 88.69KB 共4页
简 介:FJV3105R
FJV3105R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV4105R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit C
R25
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
R1 B R2
E
Value 50 50 10 100 200 150 -55 ~ 150
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) Cob fT VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10A, IE=0 IC=100A, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA f=1MHz VCE=10V, IC=5mA VCE=5V, IC=100A VCE=0.3V, IC=20mA 3.2 0.42 4.7 0.47 0.3 2.5 6.2 0.52 3.7 250 30 0.3 V pF MHz V V K Min. 50 50 0.1 Typ. Max. Units V V A
2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJV3105R
Typical Characteristics
1000
100
VCE = 5V R1 = 4.7K R2 = 10K
100
VCE =0.3V R1 = 4.7K R2 = 10K
VI (on)[V], INPUT……
