器件名称: FGB30N6S2
功能描述: 600V, SMPS II Series N-Channel IGBT
文件大小: 177.95KB 共8页
简 介:FGH30N6S2 / FGP30N6S2 / FGB30N6S2
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits
Features
100kHz Operation at 390V, 14A 200kHZ Operation at 390V, 9A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC Low Gate Charge . . . . . . . . . 23nC at VGE = 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E C G
Symbol
C
TO-220AB
E C G
TO-263AB
G
G E
COLLECTOR (Back-Metal)
COLLECTOR (Flange)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG P……
