器件名称: FGB20N6S2DT
功能描述: 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
文件大小: 232.38KB 共9页
简 介:FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits
Features
100kHz Operation at 390V, 7A 200kHZ Operation at 390V, 5A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC Low Gate Charge . . . . . . . . . 30nC at VGE = 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Low Conduction Loss Low Eon Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469)
Package
TO-247
E C G
Symbol
C
TO-220AB
E C G
TO-263AB
G
G E E
Device Maximum Ratings TC= 25°C ……
