器件名称: FDT461N
功能描述: N-Channel Logic Level PowerTrench MOSFET
文件大小: 267.69KB 共10页
简 介:FDT461N
April 2004
FDT461N
N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5
Features
rDS(ON) = 1.45 (Typ.), VGS = 4.5V, ID = 0.4A Qg(tot) = 2.36nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode
Applications
Servo Motor Load Control DC-DC converters
DRAIN (FLANGE)
D
GATE DRAIN SOURCE
G D S
SOT-223
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, RθJA= 110oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA= 110oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 0.54 0.4 Figure 4 6.3 1.13 9 -55 to 150 A A A mJ W mW/oC
oC
Ratings 100 ±20
Units V V
Thermal Characteristics
RθJA RθJA RθJA Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in2 Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in
2
110 128 147
o o
C/W C/W
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in2
oC/W
Package Marking and Ordering Information
Device Marking 461 Device FDT461N Package SOT-223 Reel Size 13” Tape Width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
FDT461N
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current……
