器件名称: FDT458P
功能描述: 30V P-Channel PowerTrench MOSFET
文件大小: 99.75KB 共5页
简 介:FDT458P
June 2001
FDT458P
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
Features
3.4 A, –30 V. RDS(ON) = 130 m @ V GS = 10 V RDS(ON) = 200 m @ V GS = 4.5 V Fast switching speed Low gate charge (2.5 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package
Applications
Battery chargers Motor drives
D
D D
D
S D SOT-223 G
S
G
D
S
SOT-223*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
– 30 ±20
(Note 1a)
Units
V V A W
3.4 10 3.0 1.3 1.1 –55 to +150
(Note 1a) (Note 1b) (Note 1c)
TJ , TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
Package Marking and Ordering Information
Device Marking 458P Device FDT458P Reel Size 13’’ Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDT458P Rev. B……
