器件名称: FDT457N
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 94.5KB 共4页
简 介:August 1998
FDT457N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V RDS(ON) = 0.090 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
D
D
S D
SOT-223
S
G D S
G
SOT-223*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
TA = 25oC unless otherwise noted FDT457N 30 ±20
(Note 1a)
Units V V A
Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
5 16 3 1.3 1.1 -65 to 150
W
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
* Order option J23Z for cropped center drain lead.
1998 Fairchild Semiconductor Corporation
FDT457N Rev.……
