器件名称: FDT3612
功能描述: 100V N-Channel PowerTrench MOSFET
文件大小: 108.01KB 共5页
简 介:FDT3612
March 2001
FDT3612
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
3.7 A, 100 V. RDS(ON) = 120 m @ VGS = 10 V RDS(ON) = 130 m @ VGS = 6 V Fast switching speed Low gate charge (14nC typ) High performance trench technology for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package
Applications
DC/DC converter Motor driving
D
D
D
D
S D
SOT-223
S
G
G
D
S
SOT-223 *
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
100 ±20
(Note 1a)
Units
V V A W
3.7 20 3.0 1.3 1.1 –55 to +150
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
Package Marking and Ordering Information
Device Marking 3612
2001 Fai……
