器件名称: FDG8850NZ
功能描述: Dual N-Channel PowerTrench
文件大小: 326.77KB 共5页
简 介:FDG8850NZ Dual N-Channel PowerTrench MOSFET
April 2007
FDG8850NZ
Dual N-Channel PowerTrench MOSFET
30V,0.75A,0.4Ω
Features
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Very low level gate drive requirements allowing operation in 3V circuits(VGS(th) <1.5V) Very small package outline SC70-6 RoHS Compliant
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General Description
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
S2 G2 D1 D2 G1 S1 SC70-6 Pin 1 S1 G1 D2 Q2 Q1 D1 G2 S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) Ratings 30 ±12 0.75 2.2 0.36 0.30 –55 to +150 Units V V A W °C
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Single operation Thermal Resistance, Junction to Ambient Single operation (Note 1a) (Note 1b) 350 415……
