器件名称: FDG8842CZ
功能描述: Complementary PowerTrench
文件大小: 455.11KB 共8页
简 介:FDG8842CZ Complementary PowerTrench MOSFET
April 2007
FDG8842CZ
Complementary PowerTrench MOSFET
Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω
Features
Q1: N-Channel Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A Very low level gate drive requirements operation in 3V circuits(VGS(th) <1.5V) Very small package outline SC70-6 RoHS Compliant allowing direct
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General Description
These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
S2 G2 D1 D2 G1 S1 SC70-6 Pin 1 S1 G1 D2 Q2 S2 Q1 D1 G2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) Q1 30 ±12 0.75 2.2 0.36 0.30 –55 to +150 Q2 –25 –8 –0.41 –1.2 Units V V A W °C
Therma……
