器件名称: FDG6335N
功能描述: 20V N & P-Channel PowerTrench MOSFETs
文件大小: 66.23KB 共5页
简 介:FDG6335N
October 2001
FDG6335N
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
0.7 A, 20 V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V Low gate charge (1.1 nC typical) High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package
Applications
DC/DC converter Power management Loadswitch
S G D D G
Pin 1
S 1 or 4 G 2 or 5
6 or 3 D 5 or 2 G 4 or 1 S
Dual N-Channel
S
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ± 12
(Note 1)
Units
V V A W °C
0.7 2.1 0.3 –55 to +150
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Marking and Ordering Information
Device Marking .35 Device FDG6335N Reel Size 7’’ Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDG6335N Rev C (W)
FDG6335N
Ele……