器件名称: FDG6317NZ
功能描述: Dual 20v N-Channel PowerTrench MOSFET
文件大小: 138.48KB 共5页
简 介:FDG6317NZ
January 2004
FDG6317NZ
Dual 20v N-Channel PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
0.7 A, 20 V. RDS(ON) = 400 m @ VGS = 4.5 V RDS(ON) = 550 m @ VGS = 2.5 V
ESD protection diode (note 3) Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package
Applications
DC/DC converter Power management Loadswitch
S G D D G
Pin 1
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ± 12
(Note 1)
Units
V V A W °C
0.7 2.1 0.3 –55 to +150
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Marking and Ordering Information
Device Marking .67 Device FDG6317NZ Reel Size 7’’ Tape width 8mm Quantity 3000 units
2004 Fairchild Semiconductor Corporation
FDG6317NZ Rev B (W)
FDG6317NZ
Electrical Characteristics
Symbol
BVDSS BVDSS T……
