器件名称: FDG315
功能描述: N-Channel Logic Level PowerTrench MOSFET
文件大小: 81.09KB 共5页
简 介:FDG315N
July 2000
FDG315N
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
2 A, 30 V. RDS(ON) = 0.12 @ VGS = 10 V RDS(ON) = 0.16 @ VGS = 4.5 V.
Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.
Applications
DC/DC converter Load switch Power Management
D D
S
1
6
2
5
SC70-6
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
30 ±20 2 6 0.75 0.48 -55 to +150
Units
V V A W °C
(Note 1a)
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking .15 Device
FDG315N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
2000 Fairchild Semiconductor International
FDG315N Rev. C
FDG315N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS I……
