器件名称: F1016
功能描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
文件大小: 41.35KB 共2页
简 介:polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance
TM
F1016
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.75 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
4 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 13 60 TYP
20WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
η
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedbac……