器件名称: SI1301DL
功能描述: P-Channel 20-V (D-S) MOSFET
文件大小: 53.4KB 共4页
简 介:Si1301DL
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
3.8 @ VGS = –4.5 V 5.0 @ VGS = –2.5 V
ID (mA)
–180 –100
SOT-323
SC-70 (3-Leads) Marking Code LG 3 S 2 D XX YY Lot Traceability and Date Code Part # Code G 1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM PD TJ, Tstg
Limit
–20 "8 –180 –140 –500 0.15 0.10 –55 to 150
Unit
V
mA A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
833
Unit
_C/W
Document Number: 71302 S-01830—Rev. A, 21-Aug-00
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1
Si1301DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = –10 mA VDS = VGS, ID = –50 mA VDS = 0 V, VGS = "8 V VDS = –20 V, VGS = 0 V VDS = –20 V, VGS = 0 V, TJ = 55_C VGS w –4.5 V, VDS = –8.0 V VGS w –2.5 V, VDS = –5.0 V VGS = –4.5 V, ID = –180 mA rDS(on) DS( ) gfs VSD VGS = –2.5 V, ID = –400 mA –120 2.6 4.0 200 –0.7 –1.2 3.8 5.0 W mS V –20 –0.4 –24 V –0.9 "2 –0.001 –1.5 "100 –100 –1 mA nA
Symbol
Test Condition
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