器件名称: SI1300DL
功能描述: N-Channel 20-V (D-S) MOSFET
文件大小: 52.21KB 共4页
简 介:Si1300DL
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V
ID (mA)
250 150
SOT-323
SC-70 (3-Leads) G 1 3 S 2 D Marking Code KC XX YY Lot Traceability and Date Code Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM PD TJ, Tstg
Limit
20 "8 250 200 500 0.15 0.10 –55 to 150
Unit
V
mA A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
833
Unit
_C/W
Document Number: 71301 S-01883—Rev. A, 28-Aug-00
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1
Si1300DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5.0 V, VGS = 2.5 V VDS = 8.0 V, VGS = 4.5 V VGS = 2.5 V, ID = 150 mA VGS = 4.5 V, ID = 250 mA Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 2.5 V, ID = 50 mA IS = 50 mA, VGS = 0 V 120 400 160 mA 800 1.6 1.2 200 0.7 1.2 2.5 2.0 mS V W 20 0.4 ……
