器件名称: SI1300BDL
功能描述: N-Channel 20-V (D-S) MOSFET
文件大小: 104.87KB 共6页
简 介:Si1300BDL
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
ID (A)a
0.4 0.35
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.85 at VGS = 4.5 V 1.08 at VGS = 2.5 V
Qg (Typ)
335
D TrenchFETr Power MOSFET D 100 % Rg Tested
RoHS
COMPLIANT
SC-70 (3-LEADS)
D G 1 Marking Code KE XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1300BDL–T1–E3 S N-Channel MOSFET 3 D
G
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Continuous Source-Drain Source Drain Diode Current TC = 25 _C TA = 25 _C TC = 25 _C Maximum Power Dissipation TC = 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID
Symbol
VDS VGS
Limit
20 "8 0.4 0.32 0.37b, c 0.30b, c 0.5 0.18 0.14b, c 0.2 0.14 0.19 0.12b, c –55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 _C. b. Surface mounted on 1” x 1” FR4 board. c. t = 5 sec d. Maximum under steady state conditions is 360 _C/W. Document Number: 73557 S–52388—Rev. A, 21–Nov–05 www.vishay.com t p 5 sec Steady State
Symbol
RthJA RthJF
Typical
540 450
Maximum
670 570
Unit
_C/W
1
Si1300BDL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Break……
