器件名称: Si1054X-T1-GE3
功能描述: N-Channel 12-V (D-S) MOSFET
文件大小: 107.2KB 共6页
简 介:New Product
Si1054X
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.095 at VGS = 4.5 V 12 0.104 at VGS = 2.5 V 0.114 at VGS = 1.8 V ID (A)a 1.32 1.26 0.88 5.25 Qg (Typ.)
FEATURES
Halogen-free Option Available TrenchFET Power MOSFET 100 % Rg Tested
RoHS
COMPLIANT
APPLICATIONS
Load Switch for Portable Devices
SC-89 (6-LEADS)
D 1 6 D
Marking Code
D 2 D
D
R
XX
YY Lot Traceability and Date Code
5
G
3
4
S
Part # Code
G
Top View
S
Ordering Information: Si1054X-T1-E3 (Lead (Pb)-free) Si1054X-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 12 ±8 1.32b, c 1.05b, c 6 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TA = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. t≤5s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W
Document Number: 69579 S-80641-Rev. B, 24-Mar-08
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New Product
Si1054X
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless oth……
