器件名称: SI1035X
功能描述: Complementary N- and P-Channel 20-V (D-S) MOSFET
文件大小: 53.8KB 共7页
简 介:Si1035X
New Product
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
5 @ VGS = 4.5 V N-Channel 20 7 @ VGS = 2.5 V 9 @ VGS = 1.8 V 10 @ VGS = 1.5 V 8 @ VGS = –4.5 V P-Channel –20 12 @ VGS = –2.5 V 15 @ VGS = –1.8 V 20 @ VGS = –1.5 V
ID (mA)
200 175 150 50 –150 –125 –100 –30
1.5V Rated
FEATURES
D Very Small Footprint D High-Side Switching D Low On-Resistance: N-Channel, 5 W P-Channel, 8 W D Low Threshold: "0.9 V (typ) D Fast Switching Speed: 45 ns (typ) D 1.5-V Operation D Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D D D D Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
SC-89
S1 1 6 D1
G1
2
5
G2
Marking Code: M
D2
3
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C
P-Channel 5 secs
"5
Symbol
VDS VGS
5 secs
Steady State
20
Steady State
–20
Unit
V
190 ID IDM IS PD TJ, Tstg ESD 450 280 145 140 650
180 130
–155 –110 –650
–145 –105 mA –380 250 130 mW _C V
380 250 130 –55 to 150 2000
–450 280 145
Operating Junction and……
