器件名称: SI1034X_05
功能描述: N-Channel 20-V (D-S) MOSFET
文件大小: 112.03KB 共5页
简 介:Si1034X
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 5 at VGS = 4.5 V 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50
FEATURES
Halogen-free Option Available TrenchFET Power MOSFET: 1.5 V Rated Low-Side Switching Low On-Resistance: 5 Ω Low Threshold: 0.9 V (typ.) Fast Switching Speed: 35 ns (typ.) 1.5 V Operation Gate-Source ESD Protected: 2000 V
RoHS
COMPLIANT
SC-89
S1 1 6 D1
BENEFITS
Ease in Driving Switches Low Offset (Error) Voltage
Marking Code: L
G1
2
5
G2
Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
D2
3
4
S2
Top View Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free) Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 - 55 to 150 2000 190 140 650 380 250 130 mW °C V 5s 20 ±5 180 130 mA Steady State Unit V
Continuous Source Current (Diode Conduction) Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board. b. ……
