器件名称: SI1033X
功能描述: P-Channel 20-V (D-S) MOSFET
文件大小: 49.07KB 共4页
简 介:Si1033X
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
8 @ VGS = –4.5 V –20 12 @ VGS = –2.5 V 15 @ VGS = –1.8 V 20 @ VGS = –1.5 V
ID (mA)
–150 –125 –100 –30
1.5V Rated
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 45 ns (typ) 1.5-V Operation Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
SC-89
S1 1 6 D1
G1
2
5
G2
Marking Code: K
D2
3
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb TA = 25_C TA = 85_C ID IDM IS TA = 25_C TA = 85_C PD TJ, Tstg ESD –450 280 145 –55 to 150 2000
Symbol
VDS VGS
5 secs
–20 "5 –155 –110 –650
Steady State
Unit
V
–145 –105 mA –380 250 130 mW _C V
Continuous Source Current (diode conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71428 S-03201—Rev. A, 12-Mar-01
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Si1033X
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