器件名称: Si1016X-T1-E3
功能描述: Complementary N- and P-Channel 20-V (D-S) MOSFET
文件大小: 107.78KB 共8页
简 介:Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.70 at VGS = 4.5 V N-Channel 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V 1.2 at VGS = - 4.5 V P-Channel - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) 600 500 350 - 400 - 300 - 150
FEATURES
Halogen-free Option Available TrenchFET Power MOSFETs 2000 V ESD Protection Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 0.7 Ω P-Channel, 1.2 Ω Low Threshold: ± 0.8 V (Typ.) Fast Switching Speed: 14 ns 1.8 V Operation
RoHS
COMPLIANT
BENEFITS
SOT-563 SC-89
S1 1 6 D1
Marking Code: A
Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
G1
2
5
G2 S2
APPLICATIONS Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
D2
3
4
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Ordering Information: Si1016X-T1-E3 (Lead (Pb)-free) Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 515 370 650 380 250 130 2000 - 450 280 145 - 55 to 150 485 350 5s Steady State 20 ±6 -……
