器件名称: CS29-08IO1C
功能描述: Phase Control Thyristor
文件大小: 58.43KB 共2页
简 介:ADVANCE TECHNICAL INFORMATION
CS 29 = 800 - 1200 V = 35 A = 23 A
Phase Control Thyristor ISOPLUS220TM
Electrically Isolated Back Surface
VRSM VDSM V 800 1200 VRRM VDRM V 800 1200 CS 29-08io1C CS 29-12io1C Type
A C
VRRM IT(RMS) IT(AV)M
ISOPLUS220TM
1 2 G 3 Isolated back surface *
* Patent pending
Symbol IT(RMS) IT(AV)M ITSM
Test Conditions TVJ = TVJM TC = 95°C; 180° sine (IT(RMS) current limit) TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 35 23 200 215 175 185 200 195 155 145 150 A A A A A A A2s A2s A2s A2s A/s
l l
Features Features
l
I2t
TVJ = 45°C VR = 0 V TVJ = TVJM VR = 0 V
l l l
(di/dt)cr
TVJ = TVJM repetitive, IT = 40 A f = 50 Hz, tP =200 s VD = 2/3 VDRM IG = 0.2 A non repetitive, IT = IT(AV)M diG/dt = 0.2 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = 30 s tP = 300 s
500 1000 5 2.5 0.5 10 -40...+150 150 -40...+150
A/s V/s W W W V °C °C °C V~ °C N / lb g
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode-to-tab capacitance (15pF typical) Planar passivated chips Epoxy meets UL 94V-0 High performance glass passivated chip Long-term stability of leakage current and blocking voltage
(dv/dt)cr PGM PGAV VRGM TVJ TVJM……
