器件名称: CS20-22MOF1
功能描述: High Voltage Phase Control Thyristorin High Voltage ISOPLUS i4-PAC-TM
文件大小: 82.14KB 共2页
简 介:Advanced Technical Information
CS 20-22moF1
High Voltage Phase Control Thyristor
in High Voltage ISOPLUS i4-PACTM
VRSM VDSM V 2100 VRRM VDRM V 2000 CS 20-22moF1 Type
V = VRRM = 2200 V DRM = 18 A IT(AV) ITSM = 200 A
1 5
Thyristors Symbol VDRM, VRRM IT(AV) IT(AV) ITSM (di/dt)cr sine 180°; TC = 90°C square; d = 1/3; TC = 90°C sine 180°; t = 10 ms; VR = 0 V; TVJ = 25°C TVJ = TVJM repetitive, IT = 40 A f = 50 Hz, tP = 200 s VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = 20 A diG/dt = 0.45 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) Conditions Conditions Maximum Ratings 2200 18 16 200 100 V A A A A/s
Features high voltage thyristor - for line frequency - chip technology for long term stability ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
250 2500
A/s V/s
(dv/dt)cr
Applications controlled rectifiers - power supplies - drives AC switches capacitor discharge control - flash tubes - x ray and laser generators
Symbol
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.3 1.3 1.5 V V
VT VGT IGT VGD IGD IL IH tgd IR, ID RthJC
IT
= 20 A; TVJ = 25°C TVJ =125°C
VD = 6 V TVJ = TVJM; VD = 2/3 VDRM tP = 10 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s VD = 6 V; RGK = VD = VDRM IG = 0.45 A; diG/dt = 0.45 A/s VR = VRRM; VD = VDRM;TVJ = 25°C TVJ = 125……
