器件名称: 1N5061
功能描述: Controlled avalanche rectifiers
文件大小: 72.6KB 共7页
简 介:DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N5059 to 1N5062 Controlled avalanche rectifiers
Product specication Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19
Philips Semiconductors
Product specication
Controlled avalanche rectiers
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION
1N5059 to 1N5062
Rugged glass package, using a high temperature alloyed construction.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N5059 1N5060 1N5061 1N5062 VRWM crest working reverse voltage 1N5059 1N5060 1N5061 1N5062 VR continuous reverse voltage 1N5059 1N5060 1N5061 1N5062 IF(AV) average forward current PARAMETER repetitive peak reverse voltage
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
MAX. 200 400 600 800 200 400 600 800 200 400 600 800 2.0 V V V V V V V V V V V V A
UNIT
Ttp = 45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4
0.8
A
IFSM ERSM Tstg Tj
non-repetitive peak forward current non-repetitive peak reverse avalanche energy storag……
