器件名称: F05B23VR
功能描述: VR Series Power MOSFET(230V 0.5A)
文件大小: 432.9KB 共12页
简 介:SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
F05B23VR
230V 0.5A
FEATURES
●Applicable to 4V drive. ●The static Rds(on) is small. ●Built-in ZD for Gate Protection.
OUTLINE DIMENSIONS
Case : B-pack (Unit : mm)
APPLICATION
●DC/DC converters ●Power supplies of DC 12-24V input ●Product related to
Integrated Service Digital Network
RATINGS
●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） □ PT On alumina substrate, 50.8mm , substrate thickness 0.64t, Ta = 25℃
Total Power Dissipation
Ratings Unit -55～150 ℃ 150 230 V ±20 0.5 1 A 0.5 1.5 W 3.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VR Series Power MOSFET
●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage θja Thermal Resistance θjc Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss ton Turn-On Time toff Turn-Off Time Conditions
ID = 250μA, VGS = 0V VDS = 230V, VGS = 0V VGS = ±20V, VDS = 0V ID = 0.5A, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 0.5A, VGS = 0V junction to ambient, on ……
