器件名称: DAN2222E
功能描述: SWITCHING DIODE
文件大小: 301.6KB 共3页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Diode
WBFBP-03A
DAN222E
SWITCHING DIODE
(1.6×1.6×0.5) unit: mm
TOP
DESCRIPTION Epitaxial planar Silicon diode FEATURES: High speed. (trr=1.5ns Typ.) Suitable for high packing density layout High reliability. APPLICATION Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: N
1. ANODE 2. ANODE 3.CATHODE
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BACK
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N
+ + Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃
Parameter Peak reverse voltage DC reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO PD Tj Tstg Limits 80 80 300 100 150 150 -55-150
Unit V V mA mA mW
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD trr
unless
Test
otherwise
specified)
MIN 80 0.1 1.2 3.5 4 MAX UNIT V
conditions
IR= 100A VR=70V IF=100mA VR=6V, f=1MHz VR=6V, IF=5mA
A
V
pF ns
Typical Characteristics
DAN222E
Sym bol A A1 b b1 D E D2 E2 e L L1 L2 L3 L4 k z
D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .2 3 0 0 .3 3 0 0 .3 2 0 R E F . 1 .5 5 0 1 .6 5 0 1 .5 5 0 1 .6 5 0 0 .7 5 0 R E F . 1 .0 0 0 R E F . 1 .0 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 8 0 R E F . 0 .2……
