器件名称: C1815LT1-SOT-23
功能描述: TRANSISTOR
文件大小: 131.23KB 共2页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
C1815LT1
FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（ Tamb=25℃ otherwise specified）
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat)
TRANSISTOR（ NPN ）
SOT— 23
1. BASE 2. EMITTER 3. COLLECTOR
１．０
２．４ １．３
０．９５
２．９
１．９
０．９５
unless
Test conditions IE=0 MIN 60 50 TYP
０．４
Unit : mm
MAX
UNIT V V
Ic= 100μA，
Ic= 0.1mA， IB=0 VCB=60 V , IE=0 VCE=50 V , IB=0 VEB= 5V , IC=0
0.1 0.1 0.1 130 400 0.25 1
μA μA μA
VCE= 6V, IC= 2mA IC=100 mA, IB= 10m A IC=100 mA, IB= 10m A VCE=10V, I C= 1mA
V V
Transition frequency
fT f=30MHz
80
MHz
CLASSIFICATION OF h FE(1) Ｒａｎｋ Ｒａｎｇｅ Ｌ １３０－２００ Ｈ ２００－４００
DEVICE MARKING : C1815LT1=HF
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
θ
0.2
E1
E
L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 θ 0.300 0° 1.800 0.550REF 0.500 8° 0.012 0° Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8° Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 ……
