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TLP176D_07 Photocoupler GaAs IRED & Photo-MOSFET TOSHIBA

TLP176G Photocoupler GaAs Ired & PhotoMOSFET TOSHIBA

TLP176GA TOSHIBA Photocoupler Photorelay TOSHIBA

TLP176GA Photocoupler Photorelay TOSHIBA

TLP176GA_07 Photocoupler Photorelay TOSHIBA

TLP176G_07 Photocoupler GaAs Ired & PhotoMOSFET TOSHIBA

TLP179D PHOTOCOUPLER PHOTO RELAY TOSHIBA

TLP180 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TOSHIBA

TLP180 Photocoupler GaAs Ired & PhotoTransistor TOSHIBA

TLP180_07 Photocoupler GaAs Ired & PhotoTransistor TOSHIBA

TLP181 GaAs IRED & PHOTO-TRANSISTOR TOSHIBA

TLP181 GaAs Ired and PhotoTransistor TOSHIBA

TLP181 Photocoupler GaAs Ired & PhotoTransistor TOSHIBA

TLP181_02 GaAs Ired and PhotoTransistor TOSHIBA

TLP181_07 Photocoupler GaAs Ired & PhotoTransistor TOSHIBA

TLP184 - **集电极-发射极电压**：最低可达80V。 - **电流传输比**：最低50%至最高400%（具体取决于等级分类）。 - **工作温度范围**：-55°C 至 110°C。这些特性使得TLP184不仅性能稳定，而且在设计中非常灵活。 ### 二、TLP184的优势 1. **高隔离电压**：TLP184具有3750 Vrms的隔离电压，这使得它在电路设计中能够有效防止高压串扰，确保系统的安全性和可靠性。对于需要高隔离度的应用场景，如工业自动化控制、通信设备等，TLP184是一 TOSHIBA

TLP190B TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array TOSHIBA

TLP190B Photocoupler GaA TOSHIBA

TLP190B_07 Photocoupler GaA TOSHIBA

TLP191B TOSHIBA Photocoupler GaA TOSHIBA