器件名称: 62S
功能描述: Silicon Schottky Diode
文件大小: 95.88KB 共4页
简 介:BAT 62-07W
Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies
3 4
2 1
4 3
VPS05605
1 2
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT 62-07W
Maximum Ratings Parameter Diode reverse voltage Forward current
Marking 62s 1=C1
Pin Configuration 2=C2 3=A2 4=A1
Package SOT-343
Unit V mA mW °C
Symbol VR IF Ptot Tj Tstg
1)
Value 40 20 100 150 -55 ... 150
Total power dissipation, TS = 103 °C Junction temperature Storage temperature
Thermal Resistance Junction - ambient RthJA RthJS ≤ 630 ≤ 470 K/W Junction - soldering point
1
Oct-07-1999
BAT 62-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 40 V Forward voltage IF = 2 mA AC characteristics
Diode capacitance VR = 0 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance VR = 0 , f = 10 kHz Series inductance Ls R0 CC CT
Unit max. 10 1 A V
typ. 0.58
IR VF
-
-
0.35 0.1 225 1.8
0.6 -
pF
k
nH
2
Oct-07-1999
BAT 62-07W
Forward current IF = f (TA *;TS )
* mounted on alumina
Forward current IF = f (VF ) TA = parameter
10 4
25
uA mA
TA IF
15
TS
10 3
TA = 25°C TA = 85°C TA = 125°C TA = -40°C
10 10 2
5
IF
120 °C
0 0
20
40
60
80
100
150
10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
2.0
TA,TS
VF
Permissible Pulse Load IFmax / IFDC = f(tp)
10 3
Permissiple pulse load IFmax/IFDC = f(tp)
10 1
K/W
IFmax / IFDC
10 2
-
0.5 0.2……
