器件名称: 62LV12816
功能描述: 128K x 16 CMOS STATIC RAM
文件大小: 83.15KB 共9页
简 介:IS62LV12816L
IS62LV12816L
128K x 16 CMOS STATIC RAM
ISSI
DESCRIPTION
ISSI
ADVANCE INFORMATION AUGUST 1998
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FEATURES
High-speed access time: 70, 100, and 120 ns CMOS low power operation – 120 mW (typical) operating – 6 W (typical) CMOS standby TTL compatible interface levels Single 3V ± 10% VCC power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available Available in the 44-pin TSOP (Type II) and 48-pin mini BGA
The ISSI IS62LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62LV12816L is packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA.
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FUNCTIONAL BLOCK DIAGRAM
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A0-A16 DECODER 128K x 16 MEMORY ARRAY
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VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
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CE OE WE UB LB
The spec……
