器件名称: 1N23WG
功能描述: SILICON MIXER DIODE
文件大小: 16.07KB 共1页
简 介:1N23WG
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
High burnout resistance Low noise figure Hermetically sealed package Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C
NONE
CHARACTERISTICS
SYMBOL
NF VSWR ZIF frange RL = 22
TC = 25 °C
TEST CONDITIONS
F = 9375 MHz RL = 100 Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB
MINIMUM TYPICAL
MAXIM
6.5 1.3
UNITS
dB
f = 1000 Hz
335 8.0
465 12.4
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
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