器件名称: 1N23WE
功能描述: SILICON MIXER DIODE
文件大小: 15.62KB 共1页
简 介:1N23WE
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
High burnout resistance Low noise figure Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG
O O
20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C
O O O
NONE
CHARACTERISTICS
SYMBOL
NF VSWR ZIF frange RL = 22
TC = 25 C
O
TEST CONDITIONS
F = 9375 MHz RL = 100 Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB
MINIMUM TYPICAL
MAXIM
7.5 1.3
UNITS
dB
f = 1000 Hz
335 8.0
465 12.4
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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