器件名称: ET8818
功能描述: Dual N-Channel Enhancement-Mode MOSFET (20V,10A)
文件大小: 943.26KB 共5页
简 介:Eternal Semiconductor Inc. ET8818
N-Channel Enhancement-Mode MOSFET (20V,10A) PRODUCT SUMMARY
VDSS
20V
ID
10A
RDS(on) (mΩ)Max
10.0 @ VGS =4.5V, ID=10A 10.5@ VGS = 4.0V, ID=5A 13.5@ VGS = 2.5V, ID=2.5A
Features
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability ESD Rating:2000V HBM
Lead（Pb）-free and halogen-free
ET8818 XXXXXX DFN2x3-6L_ top view
Marking
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Symbol
VDS VGS ID IDM PD Tj, Tstg RQJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)@TA=25°C Drain Current (Continuous)@TA=75°C Drain Current (Pulsed) Total Power Dissipation @TA=25°C Total Power Dissipation @TA=75°C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)
b a
Parameter
Ratings
20 ±12 10 8 32 1.5 1.2 -55 to +150 80
Units
V V A A A W W °C °C/W
a: Repetitive Rating: Pulse width limited by the maximum junction temperature. b: 1-in2 2oz Cu PCB board
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
DS-ET8818-EN-REV1.0
Characteristic
Test Conditions
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Min. Typ. Max. Unit http://yieternal.com
Off Characteristics
Eternal Semiconductor Inc. ET8818
BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage VGS=0V, ID=250uA Zero Gate Voltage Drain Current VDS=20V, VGS=0V VGS=±12V, VDS=0V Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance VDS=VGS, ID=250uA V……
