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器件名称: ET8818
功能描述: Dual N-Channel Enhancement-Mode MOSFET (20V,10A)
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简  介:Eternal Semiconductor Inc. ET8818 N-Channel Enhancement-Mode MOSFET (20V,10A) PRODUCT SUMMARY VDSS 20V ID 10A RDS(on) (mΩ)Max 10.0 @ VGS =4.5V, ID=10A 10.5@ VGS = 4.0V, ID=5A 13.5@ VGS = 2.5V, ID=2.5A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability ESD Rating:2000V HBM Lead(Pb)-free and halogen-free ET8818 XXXXXX DFN2x3-6L_ top view Marking Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RQJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)@TA=25°C Drain Current (Continuous)@TA=75°C Drain Current (Pulsed) Total Power Dissipation @TA=25°C Total Power Dissipation @TA=75°C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) b a Parameter Ratings 20 ±12 10 8 32 1.5 1.2 -55 to +150 80 Units V V A A A W W °C °C/W a: Repetitive Rating: Pulse width limited by the maximum junction temperature. b: 1-in2 2oz Cu PCB board Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol DS-ET8818-EN-REV1.0 Characteristic Test Conditions Page 1 of 5 Min. Typ. Max. Unit Off Characteristics Eternal Semiconductor Inc. ET8818 BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage VGS=0V, ID=250uA Zero Gate Voltage Drain Current VDS=20V, VGS=0V VGS=±12V, VDS=0V Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance VDS=VGS, ID=250uA V……
器件名 功能描述 生产厂商
ET8818 Dual N-Channel Enhancement-Mode MOSFET (20V,10A) YANGJIE
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