器件名称: P06P03LDG
功能描述: P-Channel Logic Level Enhancement Mode Field Effect Transistor
文件大小: 274.48KB 共5页
简 介:NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P06P03LDG
TO-252 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 45m ID -12A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
1
SYMBOL VDS VGS
LIMITS -30 ±20 -12 -10 -30 48 20 -55 to 150
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM
A
TC = 25 °C TC = 70 °C
PD Tj, Tstg
W
Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2
°C UNITS °C / W °C / W
SYMBOL RθJc RθJA
TYPICAL
MAXIMUM 3 75
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID =- 10A VGS = -10V, ID = -12A VDS = -10V, ID = -12A -30 60 37 16 75 45 -30 -1 -1.5 -3.0 ±250 nA 1 10 A A m S V LIMITS UNIT MIN TYP MAX
AUG-17-2004 1
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Ef……
