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P06B03LV

器件名称: P06B03LV
功能描述: Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
文件大小: 363.58KB    共5页
生产厂商: ETC
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简  介:Logic Level Enhancement P06B03LV NIKO-SEM Dual P-Channel Mode Field Effect Transistor SOP-8 PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 50mΩ ID -6A G :GATE D :DRAIN S :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±20 -6 -5 -30 2.5 1.3 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C ID IDM PD Tj, Tstg A W Operating Junction & Storage Temperature Range °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID =- 5A VGS = -10V, ID = -6A VDS = -10V, ID = -6A -30 65 40 16 80 50 -30 -0.9 -1.5 -3 V LIMITS UNIT MIN TYP MAX ±100 nA 1 10 A A mΩ S MAY-19-2003 1 Logic Level Enhancement P06B03LV NIKO-SEM Dual P-Channel Mode Field Effect Transistor SOP-8 DYNAMIC Inp……
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