器件名称: P07D03LV
功能描述: Dual N-Channel Enhancement Mode Field Effect Transistor
文件大小: 360.38KB 共5页
简 介:NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
P07D03LV
SOP-8
PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 20mΩ ID 7A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.)
1 1
SYMBOL VDS VGS
LIMITS ±30 ±20 7 6 40 2 1.3 -55 to 150 275
UNITS V V
TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C
ID IDM PD Tj, Tstg TL
A
W
°C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V 25 30 0.7 1 1.4 V LIMITS UNIT MIN TYP MAX
±100 nA 1 10 A A
1
OCT-14-2002
NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
VGS = 2.5V, ID = 5A RDS(ON) VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A VDS = 15V, ID = 5A DYNAMIC
P07D03LV
SOP-8
Drain-Source On-State Resistance1
40 23 18 16
48 30 25 S mΩ
……
